| PART |
Description |
Maker |
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS880Z36T-100 GS880Z36T-11I GS880Z36T-100I GS880Z3 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 11 ns, PQFP100
256K X 36 ZBT SRAM, 18 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
http://
|
| CY7C1356A-166AC CY7C1354A-133BGCT |
512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K X 36 ZBT SRAM, 4.2 ns, PBGA119
|
CYPRESS SEMICONDUCTOR CORP
|
| IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
Crystek, Corp.
|
| MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119
256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
| CY7C1353-40AC CY7C1353-66AC |
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
| AS7C33256NTD18A-100TQI AS7C33256NTD18A-133TQI AS7C |
256K X 18 ZBT SRAM, 12 ns, PQFP100
256K X 18 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 10 ns, PQFP100
256K X 16 ZBT SRAM, 12 ns, PQFP100
|
ALLIANCE SEMICONDUCTOR CORP
INTEGRATED SILICON SOLUTION INC
|
|
